Download Interfacial fluid dynamics and transport processes by Ranga Narayanan, Dietrich Schwabe PDF

By Ranga Narayanan, Dietrich Schwabe

The current set of lectures and educational experiences offers with quite a few topical features with regards to instabilities of interfacial methods and pushed flows from either the theoretical and experimental element of perspectives. New learn has been spurred by means of calls for for plenty of purposes in fabric sciences (melting, solidification, electro deposition), biomedical engineering and processing in microgravity environments. This booklet is meant as either a contemporary resource of reference for researchers within the box in addition to an creation to postgraduate scholars and non-specialists from comparable areas.

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Extra resources for Interfacial fluid dynamics and transport processes

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2 illustrates the typical species in a SF6-based plasma used for silicon etching. Upon electron impact, SF6 molecules are dissociated/ionized, feeding the plasma with SFx molecules, F radicals and SFx+ and F+ ions. Electron (dissociative) attachment can also form negative ions such as SF5−. The excited species emit light with a specific wavelength when they go back to the fundamental state. The emitted light goes from the infrared to the vacuum ultra violet. Silicon reaction with fluorine provides SiF2 and SiF4 Plasma Etching in Microelectronics 27 etch by-products that are eventually dissociated/ionized in the plasma.

Gas molecule dissociation in the plasma creates etch radicals that can chemically react with the substrate. The combination of high energy ion bombardment and highly reactive radicals can be used to etch the substrate in an anisotropic way. Etch inhibitors that accumulate on the pattern sidewalls form passivation layers that prevent lateral etching and help in achieving anisotropic etching of patterns.

Etch inhibitors that accumulate on the pattern sidewalls form passivation layers that prevent lateral etching and help in achieving anisotropic etching of patterns.

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