Download High temperature superconductor bulk materials: by Gernot Krabbes, Günter Fuchs, Wolf-Rüdiger Canders, Hardo PDF

By Gernot Krabbes, Günter Fuchs, Wolf-Rüdiger Canders, Hardo May, Ryszard Palka

With its complete evaluation of the present wisdom and the long run necessities within the box, this booklet provides the entire positive factors of bulk hot temperature superconducting fabrics. ranging from actual and chemical basics, the authors circulate directly to painting tools and difficulties of fabrics processing, completely figuring out the attribute houses of bulk superconductors not like lengthy conductors and movies. they supply quite a lot of particular fabrics features with recognize to the most recent advancements and destiny functions guiding from basics to sensible engineering examples.
The authors are all major overseas experts excited about the sector of excessive TC superconductor bulk fabrics because the starting. of maximum curiosity to engineers, scientists, and PhD scholars operating during this field.

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Extra resources for High temperature superconductor bulk materials: fundamentals- processing- properties control- application aspects

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Although the process of peritectic solidification is less suitable for growing high-quality single crystals, it is the approved basis for bulk materials technology because of its advantages with respect to technology and its capability for scaling up, which will be treated in the following paragraphs. 1 Experimental Procedure The melt-textured growth (MTG) process introduced by Jin et al. 1] is based on the reversible reaction m1 proceeding on the Y (or Ln)-rich boundary of the primary crystallization field of 123, as is also the case for peritectic growth of single crystals.

Larkin, Yu. N. Ovchinnikov, J. Low Temp. Phys. 73, 109 (1979). 32 G. Blatter, M. V. Feigel’man, V. B. Geshkenbein, A. I. Larkin, V. M. Vinokur, Rev. Mod. Phys. 66, 1125 (1994). 33 E. J. Kramer, J. Appl. Phys. 44, 1360 (1973). 34 A. Pruymboom, P. H. Kes, E. van der Drift, S. Radelaar, Appl. Phys. Lett. 52, 662 (1988). 35 R. Wördenweber, Phys. Rev. B 46, 3076 (1992). 36 G. Fuchs, A. Gladun, K. Fischer, C. Rodig, Cryogenics 32, 591 (1992). 37 R. I. Peterson, J. W. Ekin, Phys. Rev. B 42, 8014 (1990).

7) clearly indicates the interrelationship between thermodynamic activities (chemical potentials) of the dopant, p(O2), oxygen stoichiometry, and hole concentration: if p(O2) is fixed (depending on the environment), holes as generated by impurities will be partially consumed to form oxygen vacancies on interstitial sites (to reduce x) until an equilibrium state is achieved! Carrier concentrations, as prepared by treatment at elevated temperature, will be preserved after cooling to room temperature.

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