Download Handbook of Compound Semiconductors. Growth, Processing, by Paul H. Holloway, Gary E. McGuire PDF

By Paul H. Holloway, Gary E. McGuire

This booklet stories the new advances and present applied sciences used to supply microelectronic and optoelectronic units from compound semiconductors. It offers an entire assessment of the applied sciences essential to develop bulk single-crystal substrates, develop hetero-or homoepitaxial movies, and technique complicated units akin to HBT's, QW diode lasers, and so forth.

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Appl. , A48:315 (1989) 74. , Ext. Abstr. 52ndAutumn Mtg. Jpn Soc. Appl. Phys. and Related Societies, Okayama, (October, 1991) 75. , Int'l Conf. InP and Related Materials, p. 2, Cardiff (1991) 76. , Int'l. Conf. InP and Related Materials, p. 0 INTRODUCTION Epitaxial growth of compound semiconductor layers is mandatory for the fabrication of electronic and photonie devices. The possibility of growing high quality multilayer heterostruetures with excellent control of uniformity in layer thickness and composition, has led to tremendous progress in device developments in the last years.

MiMes and C. J. ), p. 212, Adam Hilger, Toronto (1990) 51. Elliott, K. , J. Appl. , 55:3856 (1984) 52. Kikuta, T. , CraAs and Related Compounds, Inst. Phys. Conf. , 83:45, Las Vegas (1986) 53. , Appl. Phys. , 50:191 (1987) Bulk Crystal Growth 27 54. , IEICE Technical Report, ED91-129 (1990) 55. , SemiInsulating llI-VMaterqals, (I-I. Kukimoto and S. ), p. 273, Hakone (1986) 56. , 3'pn. J. Appl. , 27:2329 (1988) 57. , Semi-Insulating 111-VMaterials, p. 237, (I-I. Kukimoto and S. ), Hakone (1986) 58.

J. Appl. , 55:3856 (1984) 52. Kikuta, T. , CraAs and Related Compounds, Inst. Phys. Conf. , 83:45, Las Vegas (1986) 53. , Appl. Phys. , 50:191 (1987) Bulk Crystal Growth 27 54. , IEICE Technical Report, ED91-129 (1990) 55. , SemiInsulating llI-VMaterqals, (I-I. Kukimoto and S. ), p. 273, Hakone (1986) 56. , 3'pn. J. Appl. , 27:2329 (1988) 57. , Semi-Insulating 111-VMaterials, p. 237, (I-I. Kukimoto and S. ), Hakone (1986) 58. , Semi-lnsulaang 111-V Materials, (I-I. Kukimoto and S. ), p. 227, Hakone (1986) 59.

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