Download Fundamental Electron Interactions with Plasma Processing by Loucas G. Christophorou, James K. Olthoff PDF

By Loucas G. Christophorou, James K. Olthoff

This quantity offers with the elemental wisdom and figuring out of basic interactions of low power electrons with molecules. It professional­ vides an up to date and accomplished account of the elemental in­ teractions of low-energy electrons with molecules of present curiosity in smooth expertise, particularly the semiconductor undefined. the first electron-molecule interplay tactics of elastic and in­ elastic electron scattering, electron-impact ionization, electron-impact dissociation, and electron attachment are mentioned, and state-of-the­ paintings authoritative information at the pass sections of those tactics in addition to on expense and delivery coefficients are supplied. This basic wisdom has been got via us during the last 8 years via a serious assessment and accomplished overview of "all" to be had information on low-energy electron collisions with plasma processing gases which we carried out on the nationwide Institute of criteria and know-how (NIST). info from this paintings have been initially released within the magazine of actual and Chemical Reference info, and feature been up-to-date and improved right here. the elemental electron-molecule interplay methods are mentioned in bankruptcy 1. The go sections and expense coefficients typically used to explain those interactions are outlined in bankruptcy 2, the place a few fresh advances within the equipment hired for his or her size or calculation are defined. The technique we followed for the severe evaluate, synthesis, and overview of the present info is defined in bankruptcy three. The significantly assessed information and advised or instructed go sections and cost and delivery coefficients for ten plasma etching gases are offered and mentioned in Chapters four, five, and 6.

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Additional resources for Fundamental Electron Interactions with Plasma Processing Gases

Sample text

Secondary electron interaction processes. These are reactions the electrons undergo with the products (ions, excited species, radicals) of their primary interactions (see also a discussion by Hatano [159]). 7), and reactions such as electron-positive ion recombination which remove electrons from the system, as well as electron interactions with metastable species and radicals. Much work is still needed regarding electron interactions with excited species and radicals especially since the cross sections of electron collisions with excited states oftentimes are much larger than with the ground-state species and since the number density of radicals can be substantial for certain plasma processing gases.

Three regions can be identified: the bulk plasma, the plasma-surface interface (sheath), and the solid. From a plasma processing perspective, the most important processes are those occurring at the surfaces, since they actually drive the etching and deposition of material. However, those processes are all initiated by species generated in the gas phase (or glow) of the plasma. Thus, the discussions in this book primarily refer to the reactions occurring in the bulk plasma for which the generic primary processes are elastic and inelastic electron scattering, electron-impact ionization, electron-impact dissociation, and electron attachment.

Moreover, since positive ion and negative ion recombination processes influence the positive ion densities, the latter are influenced by the production of negative ions by resonant electron attachment. Dissociative electron attachment is significant both as an efficient source of negative ions and as a source of free radicals. Radical densities are determined by dissociative electron attachment, partial ionization, and dissociation into neutrals. Cross sections for all of these processes are considered here, although the available data for dissociation into neutrals is sparse.

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